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Technology: Si
Unit Weight: 13 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 1.5 W
DC Current Gain hFE Max: 450, 475
Gain Bandwidth Product fT: 140 MHz, 180 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 40 V, 25 V
Continuous Collector Current: 5 A, 3.8 A
Maximum DC Collector Current: 4.5 A, 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 210 mV, 225 mV
