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Technology: Si
Unit Weight: 13 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 1.5 W
DC Current Gain hFE Max: 900 at 200 mA, 2 V
Gain Bandwidth Product fT: 160 MHz, 180 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 100 V, 70 V
Continuous Collector Current: - 2.5 A, 3.5 A
Maximum DC Collector Current: 3.5 A, 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 300 at 200 mA, 2 V
Collector- Emitter Voltage VCEO Max: 80 V, 70 V
Collector-Emitter Saturation Voltage: 240 mV, 175 mV
