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Width: 1.8 mm
Height: 1.3 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 6.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.7 W
DC Current Gain hFE Max: 900
Gain Bandwidth Product fT: 110 MHz
Emitter- Base Voltage VEBO: 7.5 V
Collector- Base Voltage VCBO: 25 V
Continuous Collector Current: - 3.5 A
Maximum DC Collector Current: 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 300
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 110 mV
