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Technology: Si
Unit Weight: 30 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 200 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 100 mA
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 20 mS
Rds On - Drain-Source Resistance: 8 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
