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Width: 3.93 mm
Height: 4.7 mm
Length: 4.7 mm
Technology: Si
Unit Weight: 240 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 350 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 350 V
Collector-Emitter Saturation Voltage: 1 V
