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Width: 8 mm
Height: 1.1 mm
Length: 8 mm
Fall Time: 5 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 449.030 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 57 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 208 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 20 ns
Typical Turn-Off Delay Time: 64 ns
Id - Continuous Drain Current: 20.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 50 C
Forward Transconductance - Min: 20 S
Rds On - Drain-Source Resistance: 199 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
