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Width: 1.6 mm
Height: 1.1 mm
Length: 2.9 mm
Fall Time: 6 ns, 13 ns
Rise Time: 6 ns, 13 ns
Technology: Si
Unit Weight: 36 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 6.6 nC, 5.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 960 mW
Vgs - Gate-Source Voltage: - 16 V, + 16 V, - 25 V, + 25 V
Typical Turn-On Delay Time: 4.5 ns, 4.5 ns
Typical Turn-Off Delay Time: 19 ns, 11 ns
Id - Continuous Drain Current: 2.5 A, 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 7 S, 3 S
Rds On - Drain-Source Resistance: 95 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 3 V
