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Width: 2 mm
Height: 0.75 mm
Length: 3 mm
Fall Time: 17 ns
Rise Time: 34 ns
Technology: Si
Unit Weight: 40 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 28 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.2 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 18 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 16.5 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
