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Width: 3 mm
Height: 0.8 mm
Length: 3 mm
Fall Time: 2.2 ns, 6.3 ns
Rise Time: 1.3 ns, 1.6 ns
Technology: Si
Unit Weight: 196 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 2.8 nC, 4.4 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 10 W, 14 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 25 V, + 25 V
Typical Turn-On Delay Time: 5.2 ns, 5.4 ns
Typical Turn-Off Delay Time: 7.4 ns, 9.1 ns
Id - Continuous Drain Current: 2 A, 6.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 750 mS, 6.4 S
Rds On - Drain-Source Resistance: 155 mOhms, 1.03 Ohms
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: 3 V, 3.1 V
