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Width: 3 mm
Height: 0.8 mm
Length: 3 mm
Fall Time: 1.3 ns, 6 ns
Rise Time: 3.1 ns, 4 ns
Technology: Si
Unit Weight: 186 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 7.3 nC, 16 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.9 W, 2.2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 11 ns, 13 ns
Typical Turn-Off Delay Time: 35 ns, 38 ns
Id - Continuous Drain Current: 18 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 29 S, 56 S
Rds On - Drain-Source Resistance: 16 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
