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Width: 3.3 mm
Height: 0.8 mm
Length: 3.3 mm
Fall Time: 5.6 ns
Rise Time: 2.2 ns
Technology: Si
Unit Weight: 165.330 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 9.1 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 40 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 8.5 ns
Typical Turn-Off Delay Time: 15 ns
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 5.4 S
Rds On - Drain-Source Resistance: 541 mOhms
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: 4 V
