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Width: 3.3 mm
Height: 0.8 mm
Length: 5 mm
Fall Time: 9 ns, 9 ns
Rise Time: 8 ns, 8 ns
Technology: Si
Unit Weight: 82.320 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 40 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 50 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12 ns, 12 ns
Typical Turn-Off Delay Time: 36 ns, 36 ns
Id - Continuous Drain Current: 103 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 107 S, 107 S
Rds On - Drain-Source Resistance: 4.3 mOhms, 4.3 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1 V
