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Width: 3.3 mm
Height: 0.8 mm
Length: 5 mm
Fall Time: 11 ns, 11 ns
Rise Time: 10 ns, 10 ns
Technology: Si
Unit Weight: 82.320 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 49 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 37 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12 ns, 12 ns
Typical Turn-Off Delay Time: 47 ns, 47 ns
Id - Continuous Drain Current: 15 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 8.7 mOhms, 8.7 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1 V
