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Width: 5 mm
Height: 1.1 mm
Length: 6 mm
Fall Time: 1.8 ns, 3.2 ns
Rise Time: 2 ns, 4.2 ns
Technology: Si
Unit Weight: 90 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 19 nC, 45 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7.9 nS, 12 nS
Typical Turn-Off Delay Time: 19 nS, 31 nS
Id - Continuous Drain Current: 15 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 67 S, 132 S
Rds On - Drain-Source Resistance: 5.6 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
