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Width: 5 mm
Height: 1.05 mm
Length: 6 mm
Fall Time: 20 ns
Rise Time: 28 ns
Technology: Si
Unit Weight: 90 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 147 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3.3 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 47 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 225 S
Rds On - Drain-Source Resistance: 600 uOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
