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Width: 5 mm
Height: 0.8 mm
Length: 6 mm
Fall Time: 2.3 ns, 6.8 ns
Rise Time: 2.5 ns, 9.2 ns
Technology: Si
Unit Weight: 211 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 28 nC, 147 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 8.6 ns, 21 ns
Typical Turn-Off Delay Time: 20 ns, 58 ns
Id - Continuous Drain Current: 30 A, 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 63 S, 160 S
Rds On - Drain-Source Resistance: 7.5 mOhms, 2.4 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V, 1.5 V
