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Width: 5 mm
Height: 1.1 mm
Length: 6 mm
Fall Time: 2 ns, 4 ns
Rise Time: 2 ns, 5 ns
Technology: Si
Unit Weight: 207.730 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 17 nC, 62 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 23 W, 29 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 8 ns, 14 ns
Typical Turn-Off Delay Time: 18 ns, 38 ns
Id - Continuous Drain Current: 56 A, 109 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 93 S, 188 S
Rds On - Drain-Source Resistance: 7 mOhms, 2.4 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
