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Width: 3.9 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 3 ns, 16 ns
Rise Time: 3 ns, 10 ns
Technology: Si
Unit Weight: 187 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 17 nC, 33 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.6 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 25 V, + 25 V
Typical Turn-On Delay Time: 7 ns, 9 ns
Typical Turn-Off Delay Time: 19 ns, 33 ns
Id - Continuous Drain Current: 8.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 27 S / 21 S
Rds On - Drain-Source Resistance: 17 mOhms, 20.5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V, 60 V
Vgs th - Gate-Source Threshold Voltage: 3 V
