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Width: 3.56 mm
Height: 1.6 mm
Length: 6.5 mm
Technology: Si
Unit Weight: 112 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 200
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 500 V
Continuous Collector Current: 300 mA
Maximum DC Collector Current: 300 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 50
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 750 mV
