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Width: 9.65 mm
Height: 4.83 mm
Length: 10.67 mm
Fall Time: 210 ns
Rise Time: 250 ns
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 110 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 3.75 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 160 ns
Id - Continuous Drain Current: 33.5 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 23 S
Rds On - Drain-Source Resistance: 60 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 4 V
