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Width: 6.22 mm
Height: 2.39 mm
Length: 6.73 mm
Fall Time: 25 ns
Rise Time: 50 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 8.2 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 7 ns
Typical Turn-Off Delay Time: 7.5 ns
Id - Continuous Drain Current: 5.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.8 S
Rds On - Drain-Source Resistance: 450 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 4 V
