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Width: 2.5 mm
Height: 6.3 mm
Length: 6.8 mm
Fall Time: 25 ns
Rise Time: 70 ns
Technology: Si
Unit Weight: 340 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 9 ns
Typical Turn-Off Delay Time: 12 ns
Id - Continuous Drain Current: 3.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2.2 S
Rds On - Drain-Source Resistance: 1.4 Ohms
Vds - Drain-Source Breakdown Voltage: 200 V
