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Width: 3.25 mm
Height: 1.5 mm
Length: 8 mm
Technology: Si
Unit Weight: 761 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 10 W
DC Current Gain hFE Max: 200
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 400 V
Continuous Collector Current: - 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 1 V
