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Width: 3.93 mm
Height: 4.7 mm
Length: 4.7 mm
Technology: Si
Unit Weight: 240 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 50 MHz
Emitter- Base Voltage VEBO: 8 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 700 mA
Maximum DC Collector Current: 700 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 200 mV
