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Width: 3.9 mm
Height: 8 mm
Length: 4.9 mm
Technology: Si
Unit Weight: 371.100 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 900 mW
DC Current Gain hFE Max: 320
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 1.5 V
