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Width: 3.25 mm
Height: 11 mm
Length: 8 mm
Technology: Si
Unit Weight: 761 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 7 W
DC Current Gain hFE Max: 320
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 300 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 600 mV
