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Width: 4.19 mm
Height: 5.33 mm
Length: 5.2 mm
Fall Time: 21 ns
Rise Time: 21 ns
Technology: Si
Unit Weight: 453.600 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 8.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 900 mW
Vgs - Gate-Source Voltage: - 50 V, + 50 V
Typical Turn-On Delay Time: 7.5 ns
Typical Turn-Off Delay Time: 23 ns
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.7 S
Rds On - Drain-Source Resistance: 4.25 Ohms
Vds - Drain-Source Breakdown Voltage: 450 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
