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Fall Time: 10 ns, 15 ns
Rise Time: 10 ns, 25 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 15 nC, 34 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.6 W, 1.7 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 12 ns, 30 ns
Typical Turn-Off Delay Time: 20 ns, 45 ns
Id - Continuous Drain Current: 6.7 A, 6.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 17 S, 22 S
Rds On - Drain-Source Resistance: 2 Ohms, 6 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
