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Fall Time: 10 ns, 20 ns
Rise Time: 45 ns, 60 ns
Technology: Si
Unit Weight: 337.318 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 14.6 nC, 62 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, NPN
Pd - Power Dissipation: 26.6 W, 60 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 17 ns, 30 ns
Typical Turn-Off Delay Time: 20 ns, 45 ns
Id - Continuous Drain Current: 40 A, 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 53 S, 91 S
Rds On - Drain-Source Resistance: 12.7 mOhms, 6.58 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
