Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 2.4 V
Vgs (Max): 10V
Gate Charge (Qg): 4.3nC
Power consumption: 50W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 55V
Input Capacitance (Ciss): 290pF
Operating temperature range: -55 to 225C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 400mOhm
Drive Voltage (Max Rds On, Min Rds On): 5V
