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Width: 5.15 mm
Height: 1.27 mm
Length: 5.9 mm
Fall Time: 2.4 ns, 3.6 ns
Rise Time: 3.4 ns, 5 ns
Technology: Si
Unit Weight: 101.660 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 8.9 nC, 33 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 1.8 ns, 5 ns
Typical Turn-Off Delay Time: 12 ns, 25 ns
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 38 S, 70 S
Rds On - Drain-Source Resistance: 3.9 mOhms, 1.2 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
