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Width: 1.5 mm
Height: 1.1 mm
Length: 3 mm
Fall Time: 1.4 ns, 2.8 ns
Rise Time: 2.3 ns, 7.7 ns
Technology: Si
Unit Weight: 20 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 650 pC, 1.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.4 ns, 5.6 ns
Typical Turn-Off Delay Time: 8.3 ns, 15.3 ns
Id - Continuous Drain Current: 2.3 A, 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4.6 S, 5 S
Rds On - Drain-Source Resistance: 44 mOhms, 62 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V, 1.5 V
