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Fall Time: 23 ns
Rise Time: 5.5 ns
Technology: Si
Unit Weight: 2.127 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 10.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 24.9 W
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Typical Turn-On Delay Time: 14 ns
Typical Turn-Off Delay Time: 63 ns
Id - Continuous Drain Current: 8.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 600 mOhms
Vds - Drain-Source Breakdown Voltage: 700 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
