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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 25 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 75 mW
DC Current Gain hFE Max: 130
Gain Bandwidth Product fT: 25 GHz
Emitter- Base Voltage VEBO: 1.5 V
Continuous Collector Current: 25 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 4.5 V
