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Infineon DF8MR12W1M1HFB67BPSA1 Silicon Carbide MOSFET, Booster, Dual N Channel, 45 A, 1.2 kV, 16.2 Milliohms, Module, 23 Pins

Name: Infineon DF8MR12W1M1HFB67BPSA1 Silicon Carbide MOSFET, Booster, Dual N Channel, 45 A, 1.2 kV, 16.2 Milliohms, Module, 23 Pins
Brand: Infineon

ManufacturerInfineon(View more products from this manufacturer)

ModelDF8MR12W1M1HFB67BPSA1

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No. of Pins: 23

Channel Type: Dual N Channel

RDS(ON) Test Voltage: 18 V

Transistor Case Style: Module

Drain Source Voltage Vds: 1.2 kV

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 45 A

Mosfet Module Configuration: Booster

Drain Source On State Resistance: 16.2 mOhm

Gate Source Threshold Voltage Max: 5.15 V

Datasheet