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Infineon F3L400R10W3S7FB11BPSA1 SiC IGBT Modules 950 V, 400 A 3-level IGBT module

Name: Infineon F3L400R10W3S7FB11BPSA1 SiC IGBT Modules 950 V, 400 A 3-level IGBT module
Brand: Infineon

ModelF3L400R10W3S7FB11BPSA1

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Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 950 V

Collector-Emitter Saturation Voltage: 1.4 V

Continuous Collector Current at 25 C: 220 A