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Infineon FF300R12KT3P_E IGBT Silicon Modules 1200 V, 300 A common emitter IGBT module

Name: Infineon FF300R12KT3P_E IGBT Silicon Modules 1200 V, 300 A common emitter IGBT module
Brand: Infineon

ModelFF300R12KT3P_E

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Technology: Si

Unit Weight: 340 g

Configuration: Dual

Mounting Style: Screw Mount

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 300 A