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Infineon FF900R12ME7PB11BPSA1 IGBT Silicon Modules 1200 V, 900 A dual IGBT module | EMINKH.COM

Discrete & Power Modules
Infineon FF900R12ME7PB11BPSA1 IGBT Silicon Modules 1200 V, 900 A dual IGBT module

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Infineon FF900R12ME7PB11BPSA1 IGBT Silicon Modules 1200 V, 900 A dual IGBT module

ManufacturerInfineon(View more products from this manufacturer)

ModelFF900R12ME7PB11BPSA1

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Technology: Si

Configuration: Dual

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 900 A

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