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Infineon FP150R12KT4P IGBT Silicon Modules 1200 V, 150 A PIM three phase input rectifier IGBT module

Name: Infineon FP150R12KT4P IGBT Silicon Modules 1200 V, 150 A PIM three phase input rectifier IGBT module
Brand: Infineon

ModelFP150R12KT4P

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Technology: Si

Unit Weight: 300 g

Configuration: 3-Phase Inverter

Mounting Style: Through Hole

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 150 A