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Infineon FP35R12KT4B11BPSA1 IGBT Silicon Modules 1200 V, 35 A PIM three phase input rectifier IGBT module

Name: Infineon FP35R12KT4B11BPSA1 IGBT Silicon Modules 1200 V, 35 A PIM three phase input rectifier IGBT module
Brand: Infineon

ModelFP35R12KT4B11BPSA1

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Technology: Si

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 210 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 35 A