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Infineon FP75R12N3T4B80BPSA1 IGBT Silicon Modules 1200 V, 75 A three phase PIM | EMINKH.COM

Discrete & Power Modules
Infineon FP75R12N3T4B80BPSA1 IGBT Silicon Modules 1200 V, 75 A three phase PIM

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Infineon FP75R12N3T4B80BPSA1 IGBT Silicon Modules 1200 V, 75 A three phase PIM

ManufacturerInfineon(View more products from this manufacturer)

ModelFP75R12N3T4B80BPSA1

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Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 75 A

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