Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Infineon FS45MR12W1M1PB11BPSA1 Transistor Silicon Carbide MOSFET Array Module Hexa N-CH 1200V AG-Easy1BM Tray

Name: Infineon FS45MR12W1M1PB11BPSA1 Transistor Silicon Carbide MOSFET Array Module Hexa N-CH 1200V AG-Easy1BM Tray
Brand: Infineon

ModelFS45MR12W1M1PB11BPSA1

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Channel Type: Hex N Channel

Power Dissipation: 20

Transistor Case Style: Module

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 25

Mosfet Module Configuration: SixPack

Drain Source On State Resistance: 45

Gate Source Threshold Voltage Max: 5.55