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Infineon FS50R12W1T7B11BOMA1 IGBT Silicon Modules 1200 V, 50 A sixpack IGBT module

Name: Infineon FS50R12W1T7B11BOMA1 IGBT Silicon Modules 1200 V, 50 A sixpack IGBT module
Brand: Infineon

ModelFS50R12W1T7B11BOMA1

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Technology: Si

Unit Weight: 24 g

Configuration: 6-Pack

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 50 A