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Fall Time: 8 ns
Rise Time: 4.8 ns
Technology: GaN-on-Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 1.6 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 10 V, + 7 V
Typical Turn-On Delay Time: 2.4 ns
Maximum Operating Frequency: > 1 MHz
Minimum Operating Frequency: 0 Hz
Typical Turn-Off Delay Time: 6 ns
Id - Continuous Drain Current: 8.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 235 mOhms
Vds - Drain-Source Breakdown Voltage: 700 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
