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Fall Time: 14 ns
Rise Time: 12 ns
Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 3.2 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 55.5 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 16 ns
Typical Turn-Off Delay Time: 13 ns
Id - Continuous Drain Current: 12.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 190 mOhms
Vds - Drain-Source Breakdown Voltage: 800 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
