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Infineon IGT40R070D1E8220ATMA1 Gallium Nitride FETs (GaN) | EMINKH.COM

GaN FETs
Infineon IGT40R070D1E8220ATMA1 Gallium Nitride FETs (GaN)

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Infineon IGT40R070D1E8220ATMA1 Gallium Nitride FETs (GaN)

ManufacturerInfineon(View more products from this manufacturer)

ModelIGT40R070D1E8220ATMA1

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Transistor Mounting: Surface Mount

Typical Gate Charge: 4.5

Transistor Case Style: HSOF

Drain Source Voltage Vds: 400

Continuous Drain Current Id: 31

Drain Source On State Resistance: 70

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