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Type: Power MOSFET
Vgs(th): 4.9 V
Vgs (Max): 20V
Gate Charge (Qg): 50nC
Power consumption: 2.8|89W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 80V
Continuous drain current: 12A/68A
Input Capacitance (Ciss): 2060pF
Operating temperature range: -40 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 9.5mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
