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Width: 6.22 mm
Height: 2.3 mm
Length: 6.5 mm
Fall Time: 170 ns
Rise Time: 540 ns
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 160 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 380 W
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Id - Continuous Drain Current: 300 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 390 S
Rds On - Drain-Source Resistance: 1.9 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
