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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 225 mW
Gate-Source Cutoff Voltage: - 1.5 V
Drain-Source Current at Vgs=0: 20 mA
Id - Continuous Drain Current: 500 pA
Forward Transconductance - Min: 15 mS
Vgs - Gate-Source Breakdown Voltage: - 20 V
Vds - Drain-Source Breakdown Voltage: 10 V
