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Technology: Si
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 mW
Gate-Source Cutoff Voltage: - 4 V
Drain-Source Current at Vgs=0: 7 mA
Id - Continuous Drain Current: - 200 uA
Forward Transconductance - Min: 1 mS
Vgs - Gate-Source Breakdown Voltage: - 50 V
Vds - Drain-Source Breakdown Voltage: 20 V
